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  January 7th - 11:24 am
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Home  > COMPOUND SEMI
  > COMPOUND SEMI
 
  >  TOP STORY
Sumitomo acquires full ownership of Eudyna Devices Inc.
Sumitomo Electric Industries, Ltd. and Fujitsu Limited have reached a basic agreement on the transfer of Fujitsu’s shares of Eudyna Devices Inc., a 50-50 joint venture between the companies, to Sumitomo Electric. Sumitomo Electric and Fujitsu will continue negotiations based on the basic agreement and plan to complete the transfer of the shares on April 1, 2009. 1. Purpose of the transfer ...
 
 
  >  SPECIAL EVENT
 
 
  >  PRESENTATION
Thick SOI susbtrate market: a 10% CAGR to 2012
The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer whose thickness exceeds 1µm. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics. In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6” (equiv.) wafer units.MEMS ...
 
 
  >  INTERVIEW
InPACT CEO argues on InP market recovery
InPACT is the primary producer of Indium Phosphide (InP) 2”, 3” and 4” substrates outside of Japan. The company sells the 2” diameter mainly for opto telecom and datacom chips; the 3” and 4” products are used for high speed ICs and PICs. InPACT keeps its technical edge on surface contamination and local flatness performance and grows the longest InP boules (see below a 4” boule standard ...
 
 
  >  WHITE PAPER
Wide BandGap RF devices : a $100m market by 2010
What can displace the Si LDMOS monopoly? ...
 
 
  >  LATEST REPORT
Sapphire substrate Market 2008
This report provides a complete analysis of the 2 main applications targeted by the sapphire substrates along with key market metrics. It describes the involvement of the major material suppliers and gives a snapshot of the sapphire industry playground. The report presents the $ and unit values on the 2005-2012 time scale for the GaN-based LED and SoS-based RF devices and their equivalence in ...
 
 
  >  NEWS
 
 C.S. Materials & Equipment
Jan 5th
SMI Licenses SiC MOCVD Enabling Technology from Veeco
Structured Materials Industries, Inc. announced today that it had licensed SiC MOCVD ...

Aixtron delivers another nitride MOCVD reactor to LED maker Showa Denko
Aixtron AG of Aachen, Germany says that, in third-quarter 2008, it delivered an AIX 2800G4...

SDK acquiring ESICAT's SiC epiwafer business
In response to growing demand for power device applications, Tokyo-based Showa Denko K.K. ...

Rubicon Technology, Inc. announces amendment to agreement with Peregrine Semiconductor
Rubicon Technology, a provider of sapphire substrates and products to the LED, RFIC, ...

Oxford Instruments receives plasma technology order in the HB-LED market.
Oxford Instruments Plasma Technology (OIPT) is pleased to announce that it has recently ...

   All the Materials & Equipment news of the month
 
 
 C.S. Optoelectronics
Jan 5th
Study: LED lighting could reap $1.8T savings
The emerging solid-state lighting that replaces incandescent and fluorescent bulbs with ...

French CNRS team has demontrated a monolithic, phosphor-free white LED
A group of researchers of the CRHEA-CNRS in Valbonne Sophia-Antipolis, France, have ...

RUSNANO, ONEXIM and the UOMP establish the joint company to manufacture LED products
The establishing documents have been signed by Anatoly Chubais, Director General of the ...

Nichia and Sharp Enter into LED and Laser Diode Patent Cross-Licensing Agreement
Nichia Corporation (head office: Anan City, Tokushima Prefecture; President: Eiji Ogawa; ...

Crystal IS wins $800,000 Department of Defense grant to develop deep UV LEDs
Crystal IS, Inc., the world’s leading manufacturer of ultraviolet light emitting diodes ...

   All the Optoelectronics news of the month
 
 
 C.S. RF electronics
Dec 18th
RFMD Announces Actions to Reduce Manufacturing Costs and Increase Cash Flow
RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of ...

Mitsubishi Electric Launches Low-Noise GaAs HEMT for Satellite Digital Radios
Mitsubishi Electric Corp has developed the MGF4921AM, a low-noise GaAs high electron ...

NXP: LDMOS transistor delivers 500W RF output power
NXP Semiconductors has released its latest LDMOS transistor for L-band radar applications ...

DoD extends GaN contract with RFMD
RF Micro Devices Inc. (RFMD) announced at its fourth annual Analyst Day that the company ...

Peregrine Semiconductor launches DuNE™ technology: digitally tunable capacitors
Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and ...

   All the RF electronics news of the month
 
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