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  November 22nd - 03:10 am
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Home  > COMPOUND SEMI
  > COMPOUND SEMI
 
  >  TOP STORY
EU to Ban Incandescent Bulbs
EU Energy Ministers have collectively agreed to begin banning lower-efficiency light bulbs (incandescents) from the start of 2010. Compact fluorescents and LEDs will replace the energy wasting bulbs. The step was first ordered at a Brussels summit in 2007 as part of an energy policy to fight climate change. However, the energy ministers did not agree to the further proposed step of committing to ...
 
 
  >  SPECIAL EVENT
Semicon Japan
SEMICON Japan 2008 Connect the World, Protect the Earth and Shape the Future ...
 
 
  >  PRESENTATION
Thick SOI susbtrate market: a 10% CAGR to 2012
The term thick-SOI refers to a semiconductor substrate with an active, single-crystal silicon layer whose thickness exceeds 1µm. It lies on a buried oxide which is set on top of a silicon wafer carrier. This structure is widely used in MEMS and in Power Device electronics. In 2007, thick-SOI substrates accounted for a $72M market, representing approximately 380,000 6” (equiv.) wafer units.MEMS ...
 
 
  >  INTERVIEW
InPACT CEO argues on InP market recovery
InPACT is the primary producer of Indium Phosphide (InP) 2”, 3” and 4” substrates outside of Japan. The company sells the 2” diameter mainly for opto telecom and datacom chips; the 3” and 4” products are used for high speed ICs and PICs. InPACT keeps its technical edge on surface contamination and local flatness performance and grows the longest InP boules (see below a 4” boule standard ...
 
 
  >  WHITE PAPER
Wide BandGap RF devices : a $100m market by 2010
What can displace the Si LDMOS monopoly? ...
 
 
  >  LATEST REPORT
Sapphire substrate Market 2008
This report provides a complete analysis of the 2 main applications targeted by the sapphire substrates along with key market metrics. It describes the involvement of the major material suppliers and gives a snapshot of the sapphire industry playground. The report presents the $ and unit values on the 2005-2012 time scale for the GaN-based LED and SoS-based RF devices and their equivalence in ...
 
 
  >  NEWS FROM THE PUBLISHER
 
 Join Yole’s expert P. Roussel on our next CS webcasts
November 24, at 10.00 am - Compound Semiconductor Materials Market: GaAs, GaN, InP, SiC, Sapphire
To register click here
 
  >  NEWS
 
 C.S. Materials & Equipment
Nov 17th
Tegal Receives Repeat Order for 901ACS Plasma Etch System from Leading High-Brightness LED Mak
Tegal Corporation, a leading designer and manufacturer of plasma etch and deposition ...

Rubicon announces $15m stock repurchase program
Rubicon Technology Inc of Franklin Park, IL, USA, which makes sapphire substrates and ...

Goldeneye introduces flexible, freestanding GaN material
LED light source maker and technology foundry Goldeneye Inc of Carlsbad, CA, USA has ...

Oxford Instruments - TDI develops new technique for HVPE growth of InGaN
Green-blue- violet light emitters based on III-nitride compounds are typically fabricated ...

Aviza Technology Ships Multiple Sigma fxP PVD Systems to a Leading GaAs Device Manufacturer
Aviza Technology, Inc. (NASDAQ:AVZA), a supplier of advanced semiconductor capital ...

   All the Materials & Equipment news of the month
 
 
 C.S. Optoelectronics
Nov 21st
Seoul Semiconductor enters into a cross license agreement with TridonicAtco for silicate
Seoul Semiconductor Co., Ltd. ("SSC") today announced that SSC has entered into a Cross ...

Taiwan LED industry to grow by 7% next year
Taiwan's LED industry is estimated to see growth of 7% in 2009, compared to global LED ...

Epistar high-power LED light efficiency reaches 100lm/W
With global LED players working to increase their LED light efficiency, Taiwan-based LED ...

Seoul enters cross license agreement with TridonicAtco
Korean LED maker Seoul Semiconductor Co Ltd (SSC) has entered into a cross license ...

AUO expects LED and 16:9 format to have 40% notebook penetration rate in 2009
 Au Optronics (AUO) expects the 16:9 format and LED backlighting to each have a 40% ...

   All the Optoelectronics news of the month
 
 
 C.S. RF electronics
Nov 17th
DoD extends GaN contract with RFMD
RF Micro Devices Inc. (RFMD) announced at its fourth annual Analyst Day that the company ...

Peregrine Semiconductor launches DuNE™ technology: digitally tunable capacitors
Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and ...

IQE Opens New Singapore Facility
IQE announces formal opening of its new facility in Tampines, Singapore, following the ...

Anadigics cuts 15% of workforce
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of...

Microsemi launches record-power SiC RF transistors for VHF and UHF radar
Microsemi Corp of Irvine, CA, USA, which manufactures analog/mixed signal ICs and ...

   All the RF electronics news of the month
 
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